TGF4112 データシートの表示（PDF） - TriQuint Semiconductor

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TGF4112

12 mm Discrete HFET

TriQuint Semiconductor 

TGF4112-EPU

 4112 12 mm Discrete HFET

• 0.5 um gate finger length

• Nominal Pout of 6.0 Watts at 2.3 GHz

• Nominal PAE of 54.5% at 2.3 GHz

• Nominal Gain of 12.7 dB at 2.3 GHz

• Die size 36.0 x 81.0 x 4.0 mils

(0.914 x 2.057 x 0.102 mm)

TGF4112-EPU RF Performance at F = 2.3 GHz

Vd = 8.0 V, Vg = -1.3 V, Iq = 0.75 A and T A = 25°C

46

55

Pout

44

PAE

50

42

45

40

40

38

35

36

30

34

25

32

20

30

15

28

10

26

5

14 15 16 17 18 19 20 21 22 23 24 25 26 27 28

Input Power (dBm)

TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504

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Web: www.triquint.com

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