BSS149 データシートの表示（PDF） - Siemens AG

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BSS149

SIPMOS® Small-Signal Transistor

Siemens AG 

BSS 149

Electrical Characteristics

at Tj = 25 ˚C, unless otherwise specified.

Parameter

Symbol

min.

Values

Unit

typ.

max.

Static Characteristics

Drain-source breakdown voltage

VGS = − 3 V, ID = 0.25 mA

Gate threshold voltage

VDS = 3 V, ID = 1 mA

Drain-source cutoff current

VDS = 200 V, VGS = − 3 V

Tj = 25 ˚C

Tj = 125 ˚C

Gate-source leakage current

VGS = 20 V, VDS = 0

Drain-source on-resistance

VGS = 0 V, ID = 0.05 A

V(BR)DSS

V

200

–

–

VGS(th)

− 1.8

− 1.2

− 0.7

IDSS

µA

–

–

IGSS

–

RDS(on)

–

–

0.2

–

200

nA

10

100

Ω

2.5

3.5

Dynamic Characteristics

Forward transconductance

gfs

VDS ≥ 2 × ID × R , DS(on)max ID = 0.35 A

Input capacitance

Ciss

VGS = 0, VDS = 25 V, f = 1 MHz

Output capacitance

Coss

VGS = 0, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

Crss

VGS = 0, VDS = 25 V, f = 1 MHz

Turn-on time ton, (ton = td(on) + tr)

td(on)

VDD = 30 V, VGS = − 2 V ... + 5 V, RGS = 50 Ω,

ID = 0.29 A

tr

Turn-off time toff, (toff = td(off) + tf)

td(off)

VDD = 30 V, VGS = − 2 V ... + 5 V, RGS = 50 Ω,

ID = 0.29 A

tf

S

0.4

0.6

–

pF

–

500

670

–

40

60

–

12

20

–

7

10

ns

–

20

30

–

60

80

–

50

65

Semiconductor Group

2

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