STB8NC70ZT4 データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

一致するリスト

STB8NC70ZT4

N-CHANNEL 700V - 0.90Ω - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET

STMicroelectronics 

STP8NC70Z - STP8NC70ZFP - STB8NC70Z - STB8NC70Z-1

THERMAL DATA

Rthj-case

Rthj-amb

Tl

Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max

Maximum Lead Temperature For Soldering Purpose

TO-220 / D2PAK

I2PAK

TO-220FP

0.93

3.13

62.5

300

AVALANCHE CHARACTERISTICS

Symbol

Parameter

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Max Value

6.8

354

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max.

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

700

Breakdown Voltage

∆BVDSS/∆TJ Breakdown Voltage Temp.

ID = 1 mA, VGS = 0

0.8

Coefficient

IDSS

Zero Gate Voltage

VDS = Max Rating

1

Drain Current (VGS = 0)

VDS = Max Rating, TC = 125 °C

50

IGSS

Gate-body Leakage

VGS = ±20V

±10

Current (VDS = 0)

°C/W

°C/W

°C

Unit

A

mJ

Unit

V

V/°C

µA

µA

µA

ON (1)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS, ID = 250µA

VGS = 10V, ID = 3.75 A

Min. Typ. Max. Unit

3

4

5

V

0.90

1.2

Ω

DYNAMIC

Symbol

gfs (1)

Parameter

Forward Transconductance

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS > ID(on) x RDS(on)max,

ID = 3.75A

VDS = 25V, f = 1 MHz, VGS = 0

Min.

Typ.

6

2350

180

22

Max.

Unit

S

pF

pF

pF

2/13

Share Link: