STW80NF55-06 データシートの表示（PDF） - STMicroelectronics
部品番号
コンポーネント説明
一致するリスト
STW80NF55-06 Datasheet PDF : 6 Pages
| |||
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 27.5 V, ID = 40A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 44 V, ID = 80 A,
VGS = 10 V
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off-Delay Time
Fall Time
td(off)
tr(Voff)
tf
tc
Off-voltage Rise Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 27.5 V, ID = 40A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
Vclamp = 44 V, ID =80A
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 80A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80 A, di/dt = 100A/µs,
VDD = 20V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STW80NF55-06
Min. Typ. Max. Unit
40
ns
240
ns
190
230
nC
40
nC
65
nC
Min.
Typ.
260
75
Max.
Unit
ns
ns
70
ns
185
ns
240
ns
110
ns
Min. Typ. Max. Unit
80
A
320
A
1.5
V
90
ns
0.295
µC
6.5
A
3/6
Share Link: 