STB80NF55L-06 データシートの表示（PDF） - STMicroelectronics
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STB80NF55L-06 Datasheet PDF : 10 Pages
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STB80NF55L-06
STP80NF55L-06
N-CHANNEL 55V - 0.005 Ω - 80A D²PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB80NF55L-06
STP80NF55L-06
55 V
55 V
< 0.0065 Ω
< 0.0065 Ω
80 A
80 A
s TYPICAL RDS(on) = 0.005 Ω
s LOW THRESHOLD DRIVE
s LOGIC LEVEL DEVICE
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE
3
1
D2PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID(#)
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Operating Junction Temperature
(#) Current limited by the package
(•) Pulse width limited safe operating area
Value
55
55
± 16
80
80
320
300
2
7
1.3
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
-55 to 175
°C
(1) ISD ≤80A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 40A, VDD = 35V
January 2003
NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: P80NF55L-06 @ B80NF55L-06 @
1/10
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