STB4NC50 データシートの表示（PDF） - STMicroelectronics
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STB4NC50 Datasheet PDF : 8 Pages
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STB4NC50
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDD = 300V, ID = 2 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
VDD = 400V, ID = 4.2A,
VGS = 10V
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 400V, ID = 4 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Min. Typ. Max. Unit
10
ns
13
ns
12.5
17
nC
2.7
nC
6.1
nC
Min.
Typ.
15
13
20
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 4 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 4 A, di/dt = 100A/µs, VDD
= 100V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
400
1.64
8.2
Max.
4
16
1.6
Unit
A
A
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/8
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