STE53NC50 データシートの表示（PDF） - STMicroelectronics
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STE53NC50 Datasheet PDF : 8 Pages
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STE53NC50
N-CHANNEL 500V - 0.070Ω - 53A ISOTOP
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STE53NC50
500V
< 0.08Ω
53 A
n TYPICAL RDS(on) = 0.07 Ω
n EXTREMELY HIGH dv/dt CAPABILITY
n 100% AVALANCHE TESTED
n NEW HIGH VOLTAGE BENCHMARK
n GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
n HIGH CURRENT, HIGH SPEED SWITCHING
n SWITH MODE POWER SUPPLIES (SMPS)
n DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (AC-RMS)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
May 2002
Value
500
500
±30
53
33
212
460
3.68
3
2500
– 65 to 150
150
(1) ISD≤ 53A, di/dt≤100 A/µs, VDD≤ 24V, Tj≤TjMAX
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
1/8
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