STS2DNF30L(2002) データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

一致するリスト

STS2DNF30L
(Rev.:2002)

N-CHANNEL 30V - 0.09 Ω - 3A SO-8 STripFET™ POWER MOSFET

STMicroelectronics 

STS2DNF30L

N-CHANNEL 30V - 0.09 Ω - 3A SO-8

STripFET™ POWER MOSFET

TYPE

VDSS

RDS(on)

ID

STS2DNF30L

30 V <0.011 Ω

3A

s TYPICAL RDS(on) = 0.09 Ω

s STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

s LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s DC MOTOR DRIVE

s DC-DC CONVERTERS

s BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

s POWER MANAGEMENT IN

PORTABLE/DESKTOP PCs

SO-8

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuos) at TC = 25°C

Single Operating

ID

Drain Current (continuos) at TC = 100°C

Single Operating

IDM(•) Drain Current (pulsed)

Ptot

Total Dissipation at TC = 25°C Dual Operating

Total Dissipation at TC = 25°C Single Operating

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area.

February 2002

.

Value

30

30

± 18 V

3

1.9

9

1.6

2

-55 to 150

150

Unit

V

V

V

A

A

A

W

W

°C

°C

1/8

Share Link: