STV40NE03L-20 データシートの表示（PDF） - STMicroelectronics
部品番号
コンポーネント説明
一致するリスト
STV40NE03L-20 Datasheet PDF : 8 Pages
| |||
STV40NE03L-20
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature F or Soldering
Pu r pos e
Max
Max
Typ
1.88
62.5
0. 5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 15V)
Max Value
40
200
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TJ = -40 to 150 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
ID = 250 µA VGS = 0
Tc = 25 oC
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 25 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
30
27
Typ.
Max.
Unit
V
1
µA
50
µA
± 100 nA
ON (∗)
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gate Threshold Voltage
Static Drain-source On
Resistance
VDS = VGS
VDS = VGS
VGS = 10V
VGS = 5V
VGS = 10V
VGS = 5V
ID = 250 µA
ID = 250 µA
ID = 20 A
ID = 20 A
ID = 20 A
ID = 20 A
Tc = 25 oC
Tc = 25 oC
Tc = 25 oC
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
1
0.6
20
Typ.
1.8
0.014
Max.
2.5
3.0
0.02
0.023
0.04
0.046
Unit
V
V
Ω
Ω
Ω
Ω
A
DYNAMIC
Symbo l
gfs (∗)
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 20 A
Min.
10
Typ.
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
1850 2400 pF
450 590
pF
160 210
pF
2/8
Share Link: 