STV80NE03L-06 データシートの表示（PDF） - STMicroelectronics
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STV80NE03L-06 Datasheet PDF : 8 Pages
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STV80NE03L-06
THERMAL DATA
Rthj-case
Rth j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
1
6 2. 5
0. 5
3 00
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 15 V)
Max Value
80
600
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TJ = - 40 to 150 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc =25 oC
Tc =25 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
27
30
Typ.
Max.
Unit
V
1
µA
50
µA
± 100 nA
ON (∗)
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
VDS = VGS ID = 250 µA TJ =25 oC
Static Drain-source On
Resistance
VGS = 10V
VGS = 5V
VGS = 10V
VGS = 5V
ID = 40 A
ID = 40 A
ID = 40 A
ID = 40 A
TJ =25 oC
TJ =25 oC
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
0.6
40
Typ.
1.7
0.005
Max.
3.0
2.5
0.012
0.018
0.006
0.009
Unit
V
Ω
Ω
Ω
Ω
A
DYNAMIC
Symbo l
gfs (∗)
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID =40 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
20
Typ.
Max.
Unit
S
6500 8700 pF
1500 2000 pF
500 700
pF
2/8
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