STGW30NB60HD データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

一致するリスト

STGW30NB60HD

N-CHANNEL 30A - 600V TO-247 PowerMESH™ IGBT

STMicroelectronics 

STGW30NB60HD

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

tc

Cross-O ver Time

VCC = 480 V

IC = 30 A

150

ns

tr(voff) Off Volt age Rise Time RGE = 10 Ω

VGE = 15 V

40

ns

td (o ff) Delay Time

210

ns

tf

Fall Time

90

ns

Eoff(**) Turn-off Switching Loss

1.10

mJ

Ets(r) Total Switching Loss

2.0

mJ

tc

Cross-O ver Time

VCC = 480 V

IC = 30 A

250

ns

tr(voff) Off Volt age Rise Time RGE = 10 Ω

VGE = 15 V

70

ns

td (o ff) Delay Time

Tj = 125 oC

250

ns

tf

Fall Time

160

ns

Eoff(**) Turn-off Switching Loss

1.6

mJ

Ets(r) Total Switching Loss

2.65

mJ

COLLECTOR-EMITTER DIODE

Symbol

Parameter

T est Conditions

If

Forward Current

Ifm

Forward Current pulsed

Vf

Forward On-Voltage

If = 30 A

If = 30 A

trr

Reverse Recovery Time

If = 30 A

Qrr

Reverse Recovery Charge dI/dt = 100 A/µS

Irrm Reverse Recovery Current

(•) Pulse width limited by max. junction temperature

(r) Include recovery losses on the STTA2006 freewheeling diode

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(**)Losses Include Also The Tail (Jedec Standardization)

Tj = 125 oC

VR= 100 V

Tj = 125 oC

Min.

Typ. Max. Unit

30 A

240 A

1.7 2.0 V

1.55

V

116

nS

406

nC

7

A

Thermal Impedance

3/8

Share Link: