STW8NB100 データシートの表示（PDF） - STMicroelectronics

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STW8NB100

N - CHANNEL 1000V - 1.2Ω - 8A - TO-247 PowerMESH™ MOSFET

STMicroelectronics 

®

TYPE

STW8NB100

VDSS

1000 V

STW8NB100

N - CHANNEL 1000V - 1.2Ω - 8A - TO-247

PowerMESH™ MOSFET

RDS(on)

ID

< 1.5 Ω

8A

PRELIMINARY DATA

s TYPICAL RDS(on) = 1.2 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s ± 30V GATE TO SOURCE VOLTAGE RATING

s 100% AVALANCHE TESTED

s LOW INTRINSIC CAPACITANCE

s GATE CHARGE MINIMIZED

s REDUCED VOLTAGE SPREAD

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstand-

ing performances. The new patent pending strip

layout coupled with the Company’s proprietary

edge termination structure, gives the lowest

RDS(on) per area, exceptional avalanche and

dv/dt capabilities and unrivalled gate charge and

switching characteristics.

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITCH MODE POWER SUPPLY (SMPS)

s DC-AC CONVERTER FOR WELDING

EQUIPMENT AND UNINTERRUPTABLE

POWER SUPPLY AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS Drain-source Voltage (VGS = 0)

VDGR

VGS

ID

ID

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

IDM(•)

Ptot

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

March 1999

Value

1000

1000

± 30

8

5

32

190

1.52

4

-65 to 150

150

(1) ISD ≤8 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Unit

V

V

V

A

A

A

W

W/oC

V/ns

oC

oC

1/5

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