NTE2382 データシートの表示（PDF） - NTE Electronics

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NTE2382

MOSFET N–Channel Enhancement Mode, High Speed Switch (Compl to NTE2383)

NTE Electronics 

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Drain–Source Breakdown Voltage

V(BR)DSS VGS = 0, ID = 0.25mA

100

Zero Gate Voltage Drain Current

IDSS VDS = 100V, VGS = 0

–

VDS = 80V, VGS = 0, TJ = +125°C

–

Gate–Body Leakage Current, Forward IGSS VGS = 20V

–

Gate–Body Leakage Current, Reverse IGSS VGS = 20V

–

Gate Threshold Voltage

VGS(th) VDS = VGS, ID = 0.25mA

2.0

Static Drain–Source On–Resistance

rDS(on) VGS = 10V, ID = 4.6A, Note 2

–

Forward Transconductance

gFS VDS ≥ 50V, ID = 4.6A, Note 2

2.7

Input Capacitance

Ciss VDS = 25V, VGS = 0, f = 1MHz

–

Output Capacitance

Coss

–

Reverse Transfer Capacitance

Crss

–

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

td(on) VDD = 50V, ID = 9.2A, ZO = 18Ω,

–

tr

MOSFET switching times are

essentially independent of operating

–

td(off) temperature

–

Fall Time

tf

–

Total Gate Charge

Gate–Source Charge

Gate–Drain (“Miller”) Charge

Qg VGS = 10V, VDS = 80V, ID = 9.2A,

–

Qgs

Gate charge is essentially

independent of operating

–

Qgd temperature

–

Source–Drain Diode Ratings and Characteristics

Continuous Source Current

IS

–

(Body Diode)

Pulse Source Current (Body Diode)

Diode Forward Voltage

ISM Note 3

–

VSD TJ = +25°C, IS = 9.2A, VGS = 0V,

–

Note 2

Reverse Recovery Time

trr

TJ = +25°C, IF = 9.2A,

–

dIF/dt = 100A/µs

Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

Note 3. Repetitive rating: Pulse width limited by max. junction temperature.

Typ Max Unit

–

–

V

– 0.25 mA

– 1.0 mA

– 100 nA

– –100 nA

– 4.0 V

– 0.27 Ω

4.1 – mhos

400 – pF

130 – pF

40 – pF

8.8 13.0 ns

30 45 ns

19 27 ns

20 30 ns

– 23 nC

4.6 – nC

9.1 – ns

– 9.2 A

– 37 A

– 2.5 V

110 240 ns

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