NE681M03 データシートの表示（PDF） - California Eastern Laboratories.

部品番号

コンポーネント説明

一致するリスト

NE681M03

NEC's NPN SILICON TRANSISTOR

California Eastern Laboratories. 

NE681M03

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)

SYMBOLS

PARAMETERS

UNITS RATINGS

VCBO Collector to Base Voltage

V

20

VCEO Collector to Emitter Voltage V

10

VEBO Emitter to Base Voltage

V

1.5

IC

Collector Current

mA

65

PT

Total Power Dissipation

mW

125

TJ

Junction Temperature

°C

150

TSTG Storage Temperature

°C -65 to +150

Note:

1. Operation in excess of any one of these parameters may result

in permanent damage.

ORDERING INFORMATION

PART NUMBER QUANTITY

NE681M03-A

NE681M03-T1-A

TYPICAL PERFORMANCE CURVES (TA = 25°C)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

65

55

45

35

25

15

5

0

2

4

6

8

10

Collector to Emitter Voltage, VCE (V)

FORWARD CURRENT GAIN

vs. COLECTOR CURRENT

500

VCE = 8 V

300

200

100

70

50

30

20

10

1

2 3 5 7 10

20 30 50

Collector Current, IC (mA)

Share Link: