MMBT5401 データシートの表示（PDF） - Unspecified

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MMBT5401

PNP Transistor

Unspecified 

Electrical Characteristics at TA = 25℃

Parameter

DC Current Gain

at -VCE = 5 V, -IC = 1 mA

at -VCE = 5 V, -IC = 10 mA

at -VCE = 5 V, -IC = 50 mA

Collector Base Cutoff Current

at -VCB = 120 V

Emitter Base Cutoff Current

at -VEB = 3 V

Collector Base Breakdown Voltage

at -IC = 100 µA

Collector Emitter Breakdown Voltage

at -IC = 1 mA

Emitter Base Breakdown Voltage

at -IE = 10 µA

Collector Emitter Saturation Voltage

at -IC = 10 mA, -IB = 1 mA

at -IC = 50 mA, -IB = 5 mA

Base Emitter Saturation Voltage

at -IC = 10 mA, -IB = 1 mA

at -IC = 50 mA, -IB = 5 mA

Gain Bandwidth Product

at -VCE = 10 V, -IC = 10 mA, f = 100 MHz

Output Capacitance

at -VCB =10 V, f = 1 MHz

MMBT5401

PNP Transistor

Symbol

hFE

hFE

hFE

-ICBO

-IEBO

-V(BR)CBO

-V(BR)CEO

-V(BR)EBO

-VCE(sat)

-VBE(sat)

fT

Cob

Min.

50

60

50

-

-

160

150

5

-

-

-

-

100

-

Max.

-

240

-

50

50

-

-

0.2

0.5

1

1

300

6

Unit

-

-

-

nA

nA

V

V

V

V

V

MHz

pF

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Revision：1.1 Jan-2019

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