R6009END3 データシートの表示（PDF） - ROHM Semiconductor
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R6009END3 Datasheet PDF : 16 Pages
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R6009END3
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Forward Transfer
Admittance
|Yfs|*6 VDS = 10V, ID = 4.5A
2.3 4.5 -
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss VGS = 0V
- 430 -
Coss VDS = 25V
- 470 - pF
Crss f = 1MHz
- 55 -
td(on)*6 VDD ⋍ 300V, VGS = 10V
-
25
-
tr*6
td(off)*6
ID = 4.5A
RL ⋍ 66.7Ω
- 35 -
ns
- 75 -
tf*6 RG = 10Ω
- 30 -
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
Qg*6
Qgs*6
Qgd*6
V(plateau)
VDD ⋍ 300V
ID = 9A
VGS = 10V
VDD ⋍ 300V, ID = 9A
*1 Limited only by maximum channel temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L≒100mH, VDD=50V, RG=25Ω, STARTING Tj=25℃
*4 TC=25℃
*5 Mounted on a epoxy PCB FR4 (25mm x 27mm x 0.8mm)
*6 Pulsed
Values
Unit
Min. Typ. Max.
- 23 -
-
4
- nC
- 15 -
- 6.4 -
V
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20180604 - Rev.001
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