MMG3001NT1(2007) データシートの表示（PDF） - Freescale Semiconductor

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MMG3001NT1
(Rev.:2007)

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Freescale Semiconductor 

Freescale Semiconductor

Technical Data

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

Broadband High Linearity Amplifier

The MMG3001NT1 is a General Purpose Amplifier that is internally

input and output matched. It is designed for a broad range of Class A,

small - signal, high linearity, general purpose applications. It is suitable for

applications with frequencies from 40 to 3600 MHz such as Cellular, PCS,

BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF.

Features

• Frequency: 40 - 3600 MHz

• P1dB: 18.5 dBm @ 900 MHz

• Small - Signal Gain: 20 dB @ 900 MHz

• Third Order Output Intercept Point: 32 dBm @ 900 MHz

• Single Voltage Supply

• Internally Matched to 50 Ohms

• Low Cost SOT - 89 Surface Mount Package

• RoHS Compliant

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

Document Number: MMG3001NT1

Rev. 6, 7/2007

MMG3001NT1

40 - 3600 MHz, 20 dB

18.5 dBm

InGaP HBT

12

3

CASE 1514 - 02, STYLE 1

SOT - 89

PLASTIC

Table 1. Typical Performance (1)

Characteristic

Symbol 900 2140 3500 Unit

MHz MHz MHz

Small - Signal Gain

(S21)

Gp

20 18 16 dB

Input Return Loss

(S11)

IRL - 25 - 25 - 19 dB

Output Return Loss

(S22)

ORL - 22 - 18 - 17 dB

Power Output @1dB

Compression

P1db 18.5 18 15.5 dBm

Third Order Output

Intercept Point

IP3

32 31 28.5 dBm

1. VCC = 5.6 Vdc, TC = 25°C, 50 ohm system

Table 2. Maximum Ratings

Rating

Symbol Value

Unit

Supply Voltage (2)

VCC

7

V

Supply Current (2)

ICC

300

mA

RF Input Power

Pin

10

dBm

Storage Temperature Range

Tstg - 65 to +150 °C

Junction Temperature (3)

TJ

150

°C

2. Voltage and current applied to device.

3. For reliable operation, the junction temperature should not

exceed 150°C.

Table 3. Thermal Characteristics (VCC = 5.6 Vdc, ICC = 58 mA, TC = 25°C)

Characteristic

Symbol

Value (4)

Thermal Resistance, Junction to Case

RθJC

92.0

4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Unit

°C/W

© Freescale Semiconductor, Inc., 2004-2007. All rights reserved.

RF Device Data

Freescale Semiconductor

MMG3001NT1

1

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