20TQ045-M3 データシートの表示（PDF） - Vishay Semiconductors
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20TQ045-M3 Datasheet PDF : 7 Pages
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VS-20TQ035-M3, VS-20TQ040-M3, VS-20TQ045-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
IRM (1)
Typical reverse leakage current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
IRM (1)
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
20 A
40 A
TJ = 25 °C
20 A
40 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TJ = 125 °C
VR = Rated VR
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.57
0.73
0.51
0.67
2.7
150
105
1400
8.0
10 000
UNITS
V
mA
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
See fig. 4
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style 2L TO-220AC
VALUES
-55 to +150
UNITS
°C
1.50
°C/W
0.50
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
20TQ035
20TQ040
20TQ045
Revision: 07-May-2020
2
Document Number: 96263
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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