STFU15NM65N データシートの表示（PDF） - STMicroelectronics

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STFU15NM65N

N-channel 650 V, 0.35 Ω typ., 12 A MDmesh™ II Power MOSFET in a TO-220FP ultra narrow leads package

STMicroelectronics 

STFU15NM65N

Electrical ratings

1

Electrical ratings

Symbol

Table 2: Absolute maximum ratings

Parameter

Value

Unit

VDS

VGS

ID

IDM(2)

PTOT

VISO

dv/dt (3)

Tstg

Tj

Drain source voltage

Gate source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Insulation withstand voltage (RMS) from all three leads to

external heat sink (t = 1 s; TC = 25 °C)

Peak diode recovery voltage slope

Storage temperature

Operating junction temperature

650

± 25

12(1)

7.56

48

30

2500

15

- 55 to 150

V

V

A

A

W

V

V/ns

°C

Notes:

(1)Limited by maximum junction temperature.

(2)Pulse width limited by safe operating area.

(3)ISD ≤ 12 A, di/dt ≤ 400 A/µs; VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.

Symbol

Rthj-case

Rthj-amb

Table 3: Thermal data

Parameter

Thermal resistance junction-case max

Thermal resistance junction-ambient max

Value

4.17

62.5

Unit

°C/W

Symbol

IAR

EAS

Table 4: Avalanche characteristics

Parameter

Avalanche current, repetitive or not repetitive

(pulse width limited by Tjmax)

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR; VDD = 50 V)

Value

Unit

3

A

187

mJ

DocID027631 Rev 2

3/12

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