LBSS123LT1 データシートの表示（PDF） - Leshan Radio Company,Ltd
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LBSS123LT1 Datasheet PDF : 4 Pages
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LESHAN RADIO COMPANY, LTD.
N-CHANNEL POWER MOSFET
LBSS123LT1
FEATURE
ƽ Pb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
LBSS123LT1
LBSS123LT1G
LBSS123LT3
LBSS123LT3G
Marking
SA
SA
(Pb-Free)
SA
SA
(Pb-Free)
Shipping
3000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
100
Vdc
Gate–Source Voltage
– Continuous
VGS
±20
Vdc
– Non–repetitive (tp ≤ 50 µs)
VGSM
±40
Vpk
Drain Current
Continuous (Note 1.)
Pulsed (Note 2.)
Adc
ID
0.17
IDM
0.68
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5
Board (Note 3.)
TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance, Junction to
RqJA
556
°C/W
Ambient
Junction and Storage Temperature TJ, Tstg –55 to +150
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width v 300 ms, Duty Cycle v 2.0%.
3. FR–5 = 1.0 0.75 0.062 in.
LBSS123LT1
3
1
2
SOT-23
Drain
3
1
Gate
2 Source
LBSS123LT1–1/4
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