LBSS84LT1G データシートの表示（PDF） - VBsemi Electronics Co.,Ltd
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LBSS84LT1G Datasheet PDF : 7 Pages
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LBSS84LT1G
www.VBsemi.tw
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Limits
Min. Typ.a Max. Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltage
Dynamic
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
VGS = 0 V, ID = - 10 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 0 V, VGS = ± 10 V
VDS = 0 V, VGS = ± 10 V, TJ = 85 °C
VDS = 0 V, VGS = ± 5 V
VDS = - 60 V, VGS = 0 V
VDS = - 60 V, VGS = 0 V, TJ = 85 °C
VGS = - 10 V, VDS = - 4.5 V
VGS = - 10 V, VDS = - 10 V
VGS = - 4.5 V, ID = - 25 mA
VGS = - 10 V, ID = - 100 mA
VGS = - 10 V, ID = - 100 mA, TJ =125 °C
VDS = - 10 V, ID = - 100 mA
IS = - 100 mA, VGS = 0 V
- 60
-1
- 50
- 600
80
V
-3
± 10
µA
± 200
± 500
± 100 nA
- 25
- 250
mA
4
3
9
mS
- 1.4
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingb
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS = - 30 V, VGS = - 15 V
ID - 100 mA
VDS = - 25 V, VGS = 0 V
f = 1 MHz
2.0
1.2
nC
0.8
23
10
pF
5
Turn-On Time
Turn-Off Time
td(on)
VDD = - 25 V, RL = 150
20
td(off)
ID - 200 mA, VGEN = - 10 V, Rg = 10
35
ns
Notes:
a. Pulse test: PW 300 µs duty cycle 2 %.
b. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
E-mail：China@VBsemi TEL:86-755-83251052
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