SI4300DY データシートの表示（PDF） - Vishay Semiconductors

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SI4300DY

N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode

Vishay Semiconductors 

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Normalized Thermal Transient Impedance, Junction-to-Foot

2

1

Duty Cycle = 0.5

0.2

0.1

0.1

0.05

0.02

Si4300DY

Vishay Siliconix

MOSFET

0.01

10 - 4

Single Pulse

10 - 3

10 - 2

10 - 1

Square Wave Pulse Duration (sec)

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Reverse Current vs. Junction Temperature

20

10

10

1

0.1

30 V

24 V

0.01

1

10

SCHOTTKY

Forward Voltage Drop

TJ = 150_C

TJ = 25_C

0.001

0.0001

0

200

25

50

75

100 125 150

TJ - Temperature (_C)

Capacitance

1

0.0

0.3

0.6

0.9

1.2

1.5

VF - Forward Voltage Drop (V)

160

120

80

Coss

40

0

0

6

12

18

24

30

VDS - Drain-to-Source Voltage (V)

Document Number: 71772

S-03951—Rev. B, 26-May-03

www.vishay.com

2-5

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