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M40Z111WMH6 データシートの表示(PDF) - STMicroelectronics

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M40Z111WMH6 Datasheet PDF : 15 Pages
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M40Z111, M40Z111W
Figure 4. Hardware Hookup
3.0, 3.3, or 5V
1N5817 or
MBR5120T3
0.1µF
Thereshold
VCC
VOUT
0.1µF
M40Z111/W
ECON
E
THS
VSS
VCC
E2
CMOS
SRAM
E
x8 or x16
AI02394
MAXIMUM RATING
Stressing the device above the rating listed in the
“Absolute Maximum Ratings” table may cause
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice reliability. Refer also to the
STMicroelectronics SURE Program and other rel-
evant quality documents.
Table 2. Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature
Grade 6
–40 to 85
°C
TSTG
Storage Temperature (VCC Off)
SNAPHAT®
–40 to 85
°C
SOIC
–55 to 125
°C
TSLD(1)
Lead Solder Temperature for 10 seconds
260
°C
VIO
Input or Output Voltages
–0.3 to VCC +0.3
V
Supply Voltage
VCC
M40Z111
–0.3 to 7.0
V
M40Z111W
–0.3 to 4.6
V
IO
Output Current
20
mA
PD
Power Dissipation
1
W
Note: 1. Reflow at peak temperature of 215°C to 225°C for < 60 seconds (total thermal budget not to exceed 180°C for between 90 to 120
seconds).
CAUTION: Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode.
CAUTION: Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets.
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