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P4C1982 データシートの表示(PDF) - Semiconductor Corporation

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P4C1982
PYRAMID
Semiconductor Corporation PYRAMID
P4C1982 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
P4C1981/1981L, P4C1982/1982L
AC CHARACTERISTICS—WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Symbol
Parameter
–10
–12
–15
–20
–25
–35
–45
Min Max Min Max Min Max Min Max Min Max Min Max Min Max Unit
tWC Write Cycle Time 10
12
13
15
20
30
40
ns
tCW Chip Enable Time
to End of Write
7
8
10
15
20
30
35
ns
tAW Address Valid to
End of Write
7
8
10
15
20
25
35
ns
tAS Address Set-up
Time
0
0
0
0
0
0
0
ns
tWP Write Pulse Width 8
9
10
15
20
25
35
ns
tAH
Address Hold Time
from End of Write
0
0
0
0
0
0
0
ns
tDW Data Valid to End
of Write
5
6
7
10
13
15
20
ns
tDH Data Hold Time
tWZ Write Enable to
Output in High Z
0
0
0
0
0
0
0
ns
5
6
7
8
10
10
15 ns
tOW Output Active from 2
2
2
2
2
2
2
ns
End of Write
tAWE Write Enable to
Data-out Valid
(P4C1981)
10
12
13
18
20
30
35 ns
tADV
Data-in Valid to
Data-out Valid
(P4C1981)
10
12
13
18
20
30
35 ns
WRITE CYCLE NO. 1 (WITH OE HIGH)
Document # SRAM114 REV B
Page 6 of 13

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