Q62702P1668 データシートの表示（PDF） - OSRAM GmbH

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Q62702P1668

Silicon NPN Phototransistor

OSRAM GmbH 

Version 1.3

Maximum Ratings (TA = 25 °C)

Parameter

Operating and storage temperature range

Collector-emitter voltage

Collector current

Collector surge current

(τ < 10 µs)

Emitter-collector voltage

Total Power dissipation

Thermal resistance

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

Characteristics (TA = 25 °C)

Parameter

Wavelength of max. sensitivity

Spectral range of sensitivity

Radiant sensitive area

Dimensions of chip area

Half angle

Capacitance

(VCE = 5 V, f = 1 MHz, E = 0)

Dark current

(VCE = 10 V, E = 0)

Rise and fall time

(IC = 1 mA, VCC = 5 V, RL = 1 kΩ)

SFH 314

Symbol

Top; Tstg

VCE

IC

ICS

VEC

Ptot

RthJA

VESD

Values

-40 ... 100

70

50

100

7

200

375

2000

Unit

°C

V

mA

mA

V

mW

K/W

V

(typ)

(typ)

(typ)

(typ)

Symbol

λS max

λ10%

A

LxW

(typ)

ϕ

(typ)

CCE

(typ (max)) ICE0

(typ)

tr, tf

Values

Unit

850

nm

(typ) 460 nm

... 1080

0.55

mm2

(typ) 1 x 1 mm x

mm

± 40

°

10

pF

3 (≤ 200)

nA

11

µs

2016-01-04

2

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