TEMD5000 データシートの表示（PDF） - Temic Semiconductors
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TEMD5000 Datasheet PDF : 5 Pages
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TEMD5100
Basic Characteristics
Tamb = 25_C
Parameter
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Diode Capacitance
Open Circuit Voltage
Short Circuit Current
Reverse Light Current
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Noise Equivalent Power
Rise Time
Fall Time
Test Conditions
m IR = 100 A, E = 0
VR = 10 V, E = 0
VR = 0 V, f = 1 MHz, E = 0
VR = 3 V, f = 1 MHz, E = 0
l Ee = 1 mW/cm2, = 950 nm
l Ee = 1 mW/cm2, = 950 nm
l Ee = 1 mW/cm2, = 950 nm,
VR = 5 V
l VR=10V, =950nm
W l VR=10V, RL=1k , =820nm
W l VR=10V, RL=1k , =820nm
Symbol
V(BR)
Iro
CD
CD
Vo
Ik
Ira
ϕ
lp
l0.5
NEP
tr
tf
Min
Typ
Max Unit
60
V
2
30 nA
70
pF
25
40
pF
350
mV
50
mA
40
55
mA
±65
950
840...1050
4x10–14
100
100
deg
nm
nm
W/√ Hz
ns
ns
Typical Characteristics (Tamb = 25_C unless otherwise specified)
1000
1.4
100
10
1
20
94 8403
VR=10V
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
1.2
lVR=5V
=950nm
1.0
0.8
0.6
0
94 8409
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
2 (5)
TELEFUNKEN Semiconductors
Rev. A1, 18-Oct-96
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