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SD2931-12MR(2016) データシートの表示(PDF) - STMicroelectronics

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SD2931-12MR
(Rev.:2016)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
SD2931-12MR Datasheet PDF : 16 Pages
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SD2931-12MR
150 W 50 V moisture resistant HF/VHF DMOS transistor
Datasheet - production data
Figure 1: Pin connection
Features
Gold metallization
Excellent thermal stability
Common source push-pull configuration
POUT = 150 W min. with 14 dB gain @ 175
MHz
Thermally enhanced packing for lower
junction temperatures
GFS and VGS sort marked on unit
Moisture resistant package specifically
designed to operate in extreme
environments
1. Drain
4
1
Description
2. Source
The SD2931-12MR is a gold metallized N-
3. Gate
channel MOS field-effect RF power transistor.
Electrically identical to the standard SD2931
4. Source
3
2
MOSFET, it is used for 50 V DC large signal
applications up to 230 MHz.
The SD2931-12MR is mechanically compatible
with the SD2931 but offers better thermal
capability (25% lower thermal resistance),
representing the best-in-class in transistors for
ISM applications, where reliability and
ruggedness are critical factors.
The SD2931-12MR benefits from the latest
generation of environmentally designed packing,
ruggedized against cyclic high moisture operation
and severe storage conditions.
Order code
SD2931-12MR
Table 1: Device summary
Marking
Package
SD2931-12MR(1)
M174MR
Packing
Plastic tray
Notes:
(1)For more details please refer to Section 5: "Marking, packing and shipping specifications".
November 2016
DocID023650 Rev 3
This is information on a product in full production.
1/16
www.st.com

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