QM75TX-HB データシートの表示（PDF） - MITSUBISHI ELECTRIC
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QM75TX-HB Datasheet PDF : 5 Pages
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MITSUBISHI TRANSISTOR MODULES
QM75TX-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
10 1
7
VCC=300V
5
IB1=150mA
4
IC=75A
3
ts
2
10 0
7
5
4
3
2
10–1
10 0
tf
2 3 4 5 7 101
Tj=25°C
Tj=125°C
2 3 4 5 7 102
BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA
10 3
7
5
3
2
tw=50µs 100µs
10 2
7
5
DC
10ms 1ms500µs
3
2
10 1
7
5
3
2
TC=25°C
10 0 NON-REPETITIVE
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10 0 2 3 5 710 1 2 3 5 7 10 2
0.5
0.4
0.3
0.2
0.1
0
10 –3 2 3 5 710 –22 3 5 710 –1 2 3 5 7 10 0
TIME (s)
REVERSE BIAS SAFE OPERATING AREA
160
140
120
100
IB2=–2.0A
80
IB2=–3.5A
60
40
20
Tj=125°C
0
0 100 200 300 400 500 600 700 800
COLLECTOR-EMITTER VOLTAGE VCE (V)
DERATING FACTOR OF F. B. S. O. A.
100
90
SECOND
BREAKDOWN
80
AREA
70
60
50
COLLECTOR
DISSIPATION
40
30
20
10
0
0 20 40 60 80 100 120 140 160
CASE TEMPERATURE TC (°C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
10 2
7
Tj=25°C
5
Tj=125°C
4
3
2
10 1
7
5
4
3
2
10 0
0
0.4 0.8 1.2 1.6 2.0
COLLECTOR-EMITTER REVERSE VOLTAGE
–VCEO (V)
Feb.1999
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