T15M1024A-70HI データシートの表示（PDF） - Taiwan Memory Technology

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T15M1024A-70HI

128K X 8 LOW POWER CMOS STATIC RAM

Taiwan Memory Technology 

tm TE

CH

T15M1024A

OPERATING CHARACTERISTICS

(Vcc = +5V / ±10%, Gnd = 0V, Ta = 0 ~ +70 °C / -40°C ~ 85°C)

PARAMETER SYM. TEST CONDITIONS

-45

-55

-70

-100 UNIT

Min Max Min Max Min Max Min Max

Input Leakage

Current

ILI

Vcc = Max,

VIN = Gnd to Vcc

- 1 - 1 - 1 - 1 uA

CE1 = VIH or CE2= VIL

Output Leakage

Current

ILO or OE = VIH

or WE = VIL

VOUT= Gnd to Vcc

- 1 - 1 - 1 - 1 uA

CE1 = VIL,CE2= VIH,

Operating Power

Supply Current

ICC

WE =VIH, OE = VIH ,

VIN = VIH or VIL,

- 2 - 2 - 2 - 2 mA

IOUT=0mA

Cycle time=1us,

100% duty, IOUT=0mA,

ICC1 CE1 ≤ 0.2V,

Average Operating

Current

CE2 ≥ VCC-0.2V,

VIN ≤ 0.2V

Cycle time=min,

-3

-3

-3

- 3 mA

ICC2

100% duty, IOUT=0mA,

CE1 = VIL,CE2= VIH ,

VIN = VIH or VIL

- 42 - 40 - 35 - 25 mA

Standby Power

Supply Current

(TTL Level)

CE1 =VIH

ISB CE2= VIL

- 0.5 - 0.5 - 0.5 - 0.5 mA

CE1 ≥ Vcc-0.2V, 0

CE2 ≥ VCC-0.2V to

- 15 - 15 - 15 - 15 uA

Standby Power

Supply Current

or CE2 ≤ 0.2V

ISB1 VIN ≤ 0.2V or

70°C

(CMOS Level)

VIN ≥ Vcc-0.2V

-40

to

- 20 - 20 - 20 - 20

uA

Output Low Voltage VOL IOL = 2.1mA

Output High Voltage VOH IOH = -1.0 mA

85°C

- 0.4 - 0.4 - 0.4 - 0.4 V

2.4 - 2.4 - 2.4 - 2.4 - V

TM Technology Inc. reserves the right

P. 4

to change products or specifications without notice.

Publication Date: OCT. 2004

Revision:C

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