IDT61298TTSA データシートの表示（PDF） - Integrated Device Technology

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IDT61298TTSA

CMOS Static RAM 256K (64K x 4-Bit)

Integrated Device Technology 

IDT61298SA

CMOS Static RAM 256K (64K x 4-Bit)

Commercial Temperature Range

Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1,2,4)

tWC

ADDRESS

tAW

CS

tAS

tWP (2)

tWR

WE

DATAOUT

DATAIN

tWHZ (5)

(3)

tOW (5)

tDW

tDH

DATA VALID

(3)

,

2971 drw 08

Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,4)

tWC

ADDRESS

tAW

CS

tAS

tCW

tWR

WE

tDW

tDH

DATAIN

DATA VALID

, 2971 drw 09

NOTES:

1. A write occurs during the overlap of a LOW CS and a LOW WE.

2. OE is continuously HIGH. If OE is LOW during a WE controlled write cycle, the write pulse width must be the greater than or equal to tWHZ + tDW to allow the I/O drivers

to turn off and data to be placed on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum

write pulse is as short as the spectified tWP.

3. During this period, I/O pins are in the output state so that the input signals must not be applied.

4. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state.

5. Transition is measured ±200mV from steady state.

6

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