CR12AM データシートの表示（PDF） - Renesas Electronics

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CR12AM

MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE

Renesas Electronics 

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉

CR12AM

MEDIUM POWER USE

NON-INSULATED TYPE, GLASS PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test conditions

IRRM

Repetitive peak reverse current

Tj=125°C, VRRM applied

IDRM

Repetitive peak off-state current

Tj=125°C, VDRM applied

VTM

On-state voltage

Tc=25°C, ITM=40A,

VGT

Gate trigger voltage

Tj=25°C, VD=6V, IT=1A

VGD

Gate non-trigger voltage

Tj=125°C, VD=1/2VDRM

IGT

Gate trigger current

Tj=25°C, VD=6V, IT=1A

IH

Rth (j-c)

Holding current

Thermal resistance

Tj=25°C, VD=12V

Junction to case V1

V1. The contact thermal resistance Rth (c-f) is 1.0°C/W with greased.

Limits

Min. Typ. Max.

—

—

2.0

—

—

2.0

—

—

1.6

—

—

1.5

0.2

—

—

—

—

30

—

15

—

—

—

1.2

Unit

mA

mA

V

V

V

mA

mA

°C/W

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTICS

103

7 Tc = 25°C

5

3

2

102

7

5

3

2

101

7

5

3

2

100

0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE CURRENT

400

360

320

280

240

200

160

120

80

40

0

100 2 3 4 5 7 101 2 3 4 5 7 102

CONDUCTION TIME

(CYCLES AT 60Hz)

Feb.1999

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