BF588 データシートの表示（PDF） - Philips Electronics
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BF588 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP high-voltage transistor
Product specification
BF588
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Rth j-mb
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
VALUE
78
25
UNIT
K/W
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
Cc
Cre
fT
collector-emitter
saturation voltage
collector capacitance
feedback capacitance
transition frequency
CONDITIONS
IE = 0; VCB = −300 V
IE = 0; VCB = −200 V; Tj = 150 °C
IC = 0; VEB = −5 V
IC = −25 mA; VCE = −20 V
IC = −40 mA; VCE = −20 V
IC = −20 mA; IB = −2 mA
MIN.
−
−
−
50
20
−
MAX.
−20
−20
−100
−
−
−0.5
UNIT
nA
µA
nA
V
IE = ie = 0; VCB = −30 V; f = 1 MHz
−
IC = ic = 0; VCE = −30 V; f = 1 MHz
−
IC = −10 mA; VCE = −10 V; f = 100 MHz 70
3
pF
2.2
pF
110
MHz
1999 Apr 12
3
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