83135-50 データシートの表示（PDF） - STMicroelectronics

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83135-50

RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

STMicroelectronics 

AM83135-050

RF & MICROWAVE TRANSISTORS

S-BAND RADAR APPLICATIONS

. REFRACTORY/GOLD METALLIZATION

. EMITTER SITE BALLASTED

. RUGGEDIZED VSWR 3:1 @ 1dB

OVERDRIVE

. LOW THERMAL RESISTANCE

. INPUT/OUTPUT MATCHING

. OVERLAY GEOMETRY

. METAL/CERAMIC HERMETIC PACKAGE

. POUT = 50 W MIN. WITH 5.2 dB GAIN

.310 x .310 2LFL (S064)

hermetically sealed

O RDER CODE

BRANDING

DE SC RI P TI O N

AM83135-050

83135-50

The AM83135-050 device is a high power silicon

bipolar NPN transistor specifically designed for S-

Band radar pulsed output and driver applications.

PIN CONNECTION

This device is characterized at 10 µsec pulsewidth

and 10% duty cycle, but is capable of operation

over a range of pulse widths, duty cycles and tem-

peratures and can withstand a 3:1 output VSWR

with a +1 dB input overdrive. Low RF thermal re-

sistance, refractory/gold metallization, and com-

puterized automatic wire bonding techniques en-

sure high reliability and product consistency (in-

cluding phase characteristics).

The AM83135-050 is supplied in the IMPAC™ Her-

metic Metal/Ceramic package with internal In-

put/Output impedance matching circuitry, and is

intended for military and other high reliability ap-

plications.

1. Collector

2. Base

3. Emitter

4. Base

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Sy mb o l

Parameter

Va l u e

Unit

PD IS S

Power Dissipation* (TC ≤ 125°C)

312

W

IC

Device Current*

8.0

A

VCC

Collector-Supply Voltage*

48

V

TJ

Junction Temperature (Pulsed RF Operation)

250

°C

TSTG

Storage Temperature

− 65 to +200

°C

THERMAL DATA

RTH(j-c) Junction-Case Thermal Resistance*

*Applies only to rated RF amplifier operation

November 27, 1996

0.40

°C/W

1/6

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