LXE15450X データシートの表示（PDF） - Philips Electronics

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LXE15450X

NPN microwave power transistor

Philips Electronics 

Philips Semiconductors

NPN microwave power transistor

Product specification

LXE15450X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

VCBO

VCER

VCEO

VEBO

IC

Pi

Ptot

Tstg

Tj

Tsld

PARAMETER

collector-base voltage

collector-emitter voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

input power

total power dissipation

storage temperature

junction temperature

soldering temperature

CONDITIONS

open emitter

RBE = 220 Ω

open base

open collector

f = 1.5 GHz; VCE = 24 V; class AB

Tmb = 75 °C

t ≤ 10 s; note 1

Note

1. Up to 0.2 mm from ceramic.

MIN.

−

−

−

−

−

−

−

−65

−

−

MAX. UNIT

45

V

30

V

25

V

3

V

9

A

12

W

70

W

+200 °C

200 °C

235 °C

10

handbook, halfpage

IC

(A)

1

MLC436

I

10 1

1

10

VCE (V)

10 2

Tmb ≤ 75 °C.

(I) Region of permissible DC operation.

Fig.2 DC SOAR.

handbook,8h0alfpage

P tot

(W)

60

MLC437

40

20

0

0

50

100

150

200

Tmb (oC)

Fig.3 Power derating curve.

1997 Feb 18

3

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