MMDF2C01HD データシートの表示（PDF） - Motorola => Freescale
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MMDF2C01HD Datasheet PDF : 12 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF2C01HD/D
™ Designer's Data Sheet
Medium Power Surface Mount Products
Complementary TMOS
Field Effect Transistors
MiniMOS™ devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
™
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
D
portable and battery powered products such as computers, N–Channel
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
G
• Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
S
• Miniature SO–8 Surface Mount Package — Saves Board Space
D
• Diode Is Characterized for Use In Bridge Circuits
P–Channel
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
G
MMDF2C01HD
Motorola Preferred Device
COMPLEMENTARY
DUAL TMOS POWER FET
2.0 AMPERES
12 VOLTS
RDS(on) = 0.045 OHM
(N–CHANNEL)
RDS(on) = 0.18 OHM
(P–CHANNEL)
CASE 751–05, Style 14
SO–8
N–Source
N–Gate
P–Source
P–Gate
1 8 N–Drain
2 7 N–Drain
3 6 P–Drain
4 5 P–Drain
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1)
Rating
S
Symbol
Drain–to–Source Voltage
N–Channel
P–Channel
VDSS
Gate–to–Source Voltage
Drain Current — Continuous
— Pulsed
N–Channel
P–Channel
N–Channel
P–Channel
VGS
ID
IDM
Operating and Storage Temperature Range
Total Power Dissipation @ TA= 25°C (2)
Thermal Resistance — Junction to Ambient (2)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds.
DEVICE MARKING
TJ and Tstg
PD
RθJA
TL
D2C01
(1) Negative signs for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.
Top View
Value
20
12
± 8.0
5.2
3.4
48
17
– 55 to 150
2.0
62.5
260
Unit
Vdc
Vdc
A
°C
Watts
°C/W
°C
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMDF2C01HDR2
13″
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 5
©MMoottoororolal,aInTc.M19O9S6 Power MOSFET Transistor Device Data
1
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