Q62702-F1059 データシートの表示（PDF） - Siemens AG

部品番号

コンポーネント説明

一致するリスト

Q62702-F1059

PNP Silicon High-Voltage Transistor

Siemens AG 

PNP Silicon High-Voltage Transistor

q Suitable for video output stages in TV sets

and switching power supplies

q High breakdown voltage

q Low collector-emitter saturation voltage

q Low capacitance

q Complementary type: BFN 20 (NPN)

BFN 21

Type

BFN 21

Marking

DF

Ordering Code

(tape and reel)

Q62702-F1059

Pin Configuration

1

2

3

B

C

E

Package1)

SOT-89

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Collector-emitter voltage, RBE = 2.7 kΩ

Emitter-base voltage

Collector current

Peak collector current

Total power dissipation, TS = 120 ˚C

Junction temperature

Storage temperature range

Thermal Resistance

Junction - ambient2)

Junction - soldering point

Symbol

VCE0

VCB0

VCER

VEB0

IC

ICM

Ptot

Tj

Tstg

Values

Unit

300

V

300

300

5

50

mA

100

1

W

150

˚C

– 65 … + 150

Rth JA

Rth JS

≤ 90

≤ 30

K/W

1) For detailed information see chapter Package Outlines.

2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group

1

5.91

Share Link: