2N3904 データシートの表示（PDF） - KEXIN Industrial

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2N3904

NPN Transistors

KEXIN Industrial 

SDMIPDTTyyppee

NPN Transistors

2N3904

TransistIoCrs

Features

NPN silicon epitaxial planar transistor for switching and

Amplifier applications

1 EMITTER

2 BASE

3 COLLECTOR

Absolute Maximum Ratings Ta = 25

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Symbol

Rating

Unit

VCBO

60

V

VCEO

40

V

VEBO

6

V

IC

0.2

A

PC

0.625

W

TJ

150

Tstg

-55 to 150

Electrical Characteristics Ta = 25

Parameter

Collecto- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base - emitter saturation voltage

Delay time

Rise time

Storage time

Fall time

Transition frequency

Symbol

Testconditons

VCBO Ic= 100 ìA IE=0

VCEO Ic= 1 mA IB=0

VEBO IE= 10 A IC=0

IcBO VCB= 60 V , IE=0

IcEO VCE= 40 V , IB=0

IEBO VEB= 5V , IC=0

VCE= 1V, IC= 10mA

hFE VCE= 1V, IC= 50mA

VCE= 1V, IC= 100mA

VCE(sat) IC=50 mA, IB= 5mA

VBE(sat) IC= 50 mA, IB= 5mA

td VCC=3.0V,VBE=-0.5V

tr IC=10mA,IB1=-IB2=1.0mA

ts VCC=3.0V,IC=10mA

tf IB1=-IB2=1.0mA

fT VCE= 20V, IC= 10mA,f=100MHz

Min Typ Max Unit

60

V

40

V

6

V

0.1

A

0.1

A

0.1

A

100

300

60

30

0.3 V

0.95 V

35

ns

35

200

ns

50

300

MHz

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