BFP450 データシートの表示（PDF） - Siemens AG

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BFP450

NPN Silicon RF Transistor

Siemens AG 

BFP 450

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-base cutoff current

VCB = 5 V, IE = 0

Emitter-base cutoff current

VEB = 1.5 V, IC = 0

DC current gain

IC = 50 mA, VCE = 4 V

AC characteristics

Transition frequency

IC = 90 mA, VCE = 3 V, f = 1 GHz

IC = 90 mA, VCE = 3 V, f = 2 GHz

Collector-base capacitance

VCB = 2 V, f = 1 MHz

Collector-emitter capacitance

VCE = 2 V, f = 1 MHz

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Noise figure

IC = 10 mA, VCE = 2 V, ZS = ZSopt ,

f = 1.8 GHz

Power gain 2)

IC = 50 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt ,

f = 1.8 GHz

Insertion power gain

IC = 50 mA, VCE = 2 V, f = 1.8 GHz,

ZS = ZL = 50Ω

Third order intersept point

IC = 50 mA, VCE = 3 V, ZS=ZSopt , ZL=ZLopt ,

f = 1.8 GHz

1dB Compression point

IC = 50 mA, VCE = 3 V, f = 1.8 GHz,

ZS=ZSopt , ZL=ZLopt

V(BR)CEO 4.5

ICBO

-

IEBO

-

hFE

50

fT

-

15

Ccb

-

Cce

-

Ceb

-

F

-

Gma

-

|S21|2

8

IP3

-

P-1dB

-

5 6.5 V

- 600 nA

- 100 µA

80 150 -

GHz

24

-

17

-

0.48 0.75 pF

1.33 -

1.75 -

1.25 1.6 dB

14

- dB

11

-

29

- dBm

19

-

SSeemmicioconndduuctcotor rGGrorouupp

2) Gma = |S21 / S12| (k-(k2-1)1/2)

22

Sep-109998-1-1919-081

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