BPW33 データシートの表示（PDF） - Infineon Technologies

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BPW33

Silicon Photodiode

Infineon Technologies 

BPW 33

Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)

Characteristics (TA = 25 °C, standard light A, T = 2856 K) (cont’d)

Bezeichnung

Parameter

Symbol

Symbol

Wert

Value

Quantenausbeute, λ = 850 nm

Quantum yield

η

0.86

Leerlaufspannung, Ev = 1000 Ix

Open-circuit voltage

VO

440 (≥ 375)

Kurzschlußstrom, Ev = 1000 Ix

Short-circuit current

ISC

72

Anstiegs- und Abfallzeit des Fotostromes

tr, tf

1.5

Rise and fall time of the photocurrent

RL = 1 kΩ; VR = 5 V; λ = 850 nm; Ip = 70 µA

Durchlaßspannung, IF = 100 mA, E = 0

VF

1.3

Forward voltage

Kapazität, VR = 0 V, f = 1 MHz, E = 0

C0

630

Capacitance

Temperaturkoeffizient von VO

Temperature coefficient of VO

Temperaturkoeffizient von ISC

Temperature coefficient of ISC

Rauschäquivalente Strahlungsleistung

Noise equivalent power

VR = 1 V, λ = 850 nm

Nachweisgrenze, VR = 1 V, λ = 850 nm

Detection limit

TCV

TCI

NEP

D*

– 2.6

0.2

4.3 × 10– 15

6.3 × 1013

Einheit

Unit

Electrons

Photon

mV

µA

µs

V

pF

mV/K

%/K

----W-------

Hz

c----m------×----------H----z--

W

2001-02-21

3

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