HMC565LC5(V02) データシートの表示（PDF） - Hittite Microwave

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HMC565LC5
(Rev.:V02)

GaAs SMT PHEMT LOW NOISE AMPLIFIER, 6 - 20 GHz

Hittite Microwave 

v02.0209

Absolute Maximum Ratings

Drain Bias Voltage (Vdd1, Vdd2, Vdd3)

RF Input Power (RFIN)(Vdd = +3.0 Vdc)

Channel Temperature

Continuous Pdiss (T= 85 °C)

(derate 8.5 mW/°C above 85 °C)

Thermal Resistance

(channel to ground paddle)

Storage Temperature

Operating Temperature

ESD Sensitivity (HBM)

+3.5 Vdc

0 dBm

175 °C

0.753 W

119.5 °C/W

-65 to +150 °C

-40 to +85 °C

Class 1A

Outline Drawing

HMC565LC5

GaAs SMT PHEMT LOW NOISE

AMPLIFIER, 6 - 20 GHz

8

Typical Supply Current vs. Vdd

Vdd (Vdc)

+2.5

+3.0

+3.5

Idd (mA)

51

53

56

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

NOTES:

1. PACKAGE BODY MATERIAL: ALUMINA

2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES

GOLD OVER 50 MICROINCHES MINIMUM NICKEL

3. DIMENSIONS ARE IN INCHES [MILLIMETERS]

4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE

5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM

6. ALL GROUND LEADS AND GROUND PADDLE MUST BE

SOLDERED TO PCB RF GROUND

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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