OP505C データシートの表示（PDF） - TT Electronics.
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OP505C Datasheet PDF : 10 Pages
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OP505, OP505W, OP506, OP506W
OP535, OP705
Electrical Specifications
Absolute Maximum Ratings ( TA = 25° C unless otherwise noted)
Storage & Operating Temperature Range
Collector-Emitter Voltage (OP505, OP506, OP505W, OP506W, OP705)
Collector-Emitter Voltage (OP535)
Emitter-Collector Voltage (OP505 and OP506 series only)
Lead Soldering Temperature (1/16 inch (1.6 mm) from case for 5 seconds with soldering iron)
Power Dissipation
Emitter Reverse Current (OP705 series only)
Collector DC Current (OP705 series only)
-40°C to +100° C
30 V
15 V
5.0 V
260° C
100 mW (2)
10 mA
30 mA
Electrical Characteristics ( TA = 25° C unless otherwise noted )
OP505, OP506, OP505W, OP506W, OP705
SYMBOL
PARAMETER
MIN TYP
On-State Collector Current
OP505A, OP506A 4.30 -
OP505B, OP506B 2.15 -
OP505C, OP506C 1.10 -
IC(ON)
OP505D 0.55 -
OP705A 3.95 -
OP505W, OP506W 0.10 -
VCE(SAT)
Collector-Emitter Saturation Voltage
OP505, OP506, OP705
-
-
OP505W, OP506W -
-
ICEO Collector-Dark Current
-
-
V(BR)CEO Collector-Emitter Breakdown Voltage
30
-
V(BR)ECO
Emitter-Collector Breakdown Voltage
OP505, OP506
5
-
OP705 0.4
-
∆IC/∆T
EKP
Relative IC Changes with Temperature
Knee Point Irradiance (OP705)
- 1.00
- 0.02
MAX UNITS
TEST CONDITIONS
-
5.95
mA VCE = 5 V, Ee = 0.50 mW/cm2 , Note 3
3.00
-
12.00 mA VCE = 5 V, Ee = 0.50 mW/cm2, Note 3
-
mA VCE = 5 V, Ee = 0.75 mW/cm2, Note 3
0.40
V
IC = 250 μA, EE = 0.5 mW/cm2, Note 3
0.40
V
IC = 50 μA, EE = 0.75 mW/cm2, Note 3
100
nA VCE = 10 V, EE = 0
-
V
IC = 100 μA, EE = 0
-
V
IE = 100 μA, EE = 0
-
V
IE = 100 μA, EE = 0
-
% / °C VCE = 5 V, EE = 1.0 mW/cm2
- mW/cm2 VCE = 5 V, Note 4
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum of 20 grams force may be applied
to the leads when soldering.
(2) Derate linearly 1.33 mW/° C above 25° C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level, which varies less than 10% over
the entire lens surface of the phototransistor being tested.
(4) The knee point irradiance is defined as the irradiance required to increase Ic(on) to 50 μA.
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B 08/2016 Page 3
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