2N6594 データシートの表示（PDF） - New Jersey Semiconductor
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2N6594 Datasheet PDF : 2 Pages
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<±7V£
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
i, One.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N6594
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEo(sus)= -40V(Min.)
• Excellent Safe Operating Area
• Complement to Type 2N6569
APPLICATIONS
• Designed for low voltage amplifer power switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-45
V
VCEO Collector-Emitter Voltage
-40
V
VEBO Emitter-Base Voltage
-5.0
V
Ic
Collector Current-Continuous
-12
A
ICM
Collector Current-Peak
-24
A
IB
Base Current-Continuous
-5
A
IE
Emitter Current-Continuous
-17
A
I EM
Emitter Current-Peak
-34
A
PC
Collector Power Dissipation@Tc=25°C 100
W
Tj
Junction Temperature
Tstg
Storage Temperature
200
°C
-65-200 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.75
UNIT
'CAW
X^jg|
3
PIN l.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
2
••
A
*1
1
+
L
'
t-E
I
:C
-*^U~D i PL
j*— u —*
! / t \ J / \ C
^*' s/ T-4^
tV
i
r
iB
1' |
^3EI
linn
CUM MM MAX
A
3900
B 25.30 26.67
c
780 8.30
0
0.9d 1.10
E
1 <!0 1.60
G
1092
H
546
K 11.40 13.SO
L 1675 1705
N 19.40 19.62
Q
4.00 4,20
V 3000 3020
v
430 4.50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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