ZXMP3A13F データシートの表示（PDF） - ZP Semiconductor

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ZXMP3A13F

30V P-CHANNEL ENHANCEMENT MODE MOSFET

ZP Semiconductor 

ZXMP3A13F

30V P-CHANNEL ENHANCEMENT MODE MOSFET

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)

PARAMETER

SYMBOL

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage

IGSS

Gate-Source Threshold Voltage

VGS(th)

Static Drain-Source On-State Resistance (1) RDS(on)

Forward Transconductance (1)(3)

DYNAMIC (3)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Gate Charge

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

VSD

Reverse Recovery Time (3)

trr

Reverse Recovery Charge (3)

Qrr

MIN. TYP. MAX. UNIT CONDITIONS

-30

V ID=-250␮A, VGS=0V

-0.5 ␮A VDS=-30V, VGS=0V

100 nA VGS=Ϯ20V, VDS=0V

-1.0

V

I

=-250

D

␮A,

VDS=

VGS

0.210

0.330

⍀ VGS=-10V, ID=-1.4A

⍀ VGS=-4.5V, ID=-1.1A

2.4

S VDS=-15V,ID=-1.4A

206

pF

59.3

pF

VDS=-15V, VGS=0V,

f=1MHz

49.2

pF

1.5

3.0

11.1

7.6

3.8

6.4

0.69

2.0

ns

ns VDD =-15V, ID=-1A

ns RG=6.0⍀, VGS=-10V

ns

nC VDS=-15V,VGS=-5V,

ID=-1.4A

nC

nC

VDS=-15V,VGS=-10V,

ID=-1.4A

nC

-0.85 -0.95

15.6

9.6

V TJ=25°C, IS=-1.1A,

VGS=0V

ns TJ=25°C, IF=-0.95A,

nC di/dt= 100A/μs

NOTES:

(1) Measured under pulsed conditions. Width=300μs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

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