T1050 データシートの表示（PDF） - STMicroelectronics
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T1050 Datasheet PDF : 12 Pages
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BTA10, BTB10, T1035, T1050
Characteristics
1
Characteristics
Table 1. Absolute maximum ratings
Symbol
Parameters
IT(RMS) RMS on-state current (full sine wave)
ITSM
Non repetitive surge peak on-state current (full cycle, Tj
initial = 25 °C)
I2t
I2t value for fusing
Critical rate of rise of on-state current
dl/dt
IG = 2 x IGT , tr ≤ 100 ns
VDSM/VRSM Non repetitive surge peak off-state voltage
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Value
Unit
TO-220AB
Tc = 105 °C
10
A
TO-220AB Ins. Tc = 95 °C
F = 50 Hz
tp = 20 ms
100
A
F = 60 Hz
tp = 16.7 ms
105
tp = 10 ms
55
A2s
F = 120 Hz
Tj = 125 °C
50
A/µs
tp = 10 ms
tp = 20 µs
Tj = 25 °C
VDRM/VRRM +
100
V
Tj = 125 °C
4
A
Tj = 125 °C
1
W
-40 to +150 °C
-40 to +125 °C
Table 2. Static electrical characteristics
Symbol
VT(1)
VTO
RD
Test conditions
ITM = 14 A, tp = 380 µs
threshold on-state voltage
Dynamic resistance
IDRM/IRRM
VDRM = VRRM
1. For both polarities of A2 referenced to A1
Tj
25 °C
125 °C
125 °C
25 °C
125 °C
Value
Unit
Max.
1.55
V
Max.
0.85
V
Max.
40
mΩ
5
µA
Max.
1
mA
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - Snubberless™ (3 quadrants)
Symbol
Parameters
Quadrant
T1035
T1050
BTA10-xCW
BTA10-xBW Unit
BTB10-xCW
BTB10-xBW
IGT
VGT
VGD
IH
VD = 12 V, RL = 33 Ω
VD = VDRM, RL = 3,3 kΩ, Tj = 125 °C
IT = 500 mA
IL
IG = 1.2 IGT
dV/dt(2) VD = 67 % VDRM gate open, Tj = 125 °C
I - II - III Max.
I - II - III Max.
I - II - III Min.
I - II - III Max.
I - III Max.
II
Max.
Min.
35
1.3
0.2
35
50
80
60
500
50
50
70
80
1000
mA
V
V
mA
mA
V/µs
DS3165 - Rev 9
page 2/12
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