2SB557 データシートの表示（PDF） - New Jersey Semiconductor
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2SB557 Datasheet PDF : 2 Pages
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J.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon PNP Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB557
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= -120V(Min)
• High Power Dissipation-
: Pc= 80W(Max)@Tc=25°C
• Complement to Type 2SD427
APPLICATIONS
• Designed for power amplifier applications.
• Recommended for SOW high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25-C)
SYMBOL
PARAMETER
VALUE
UNIT
Vcao Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-8
A
IE
Emitter Current-Continuous
Collector Power Dissipation
PC
@TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature
8
A
80
W
150
"C
-65-150 r
3
J
1C
]
2
PIN l.Base
2.Emitter
3.Collestor(case)
TO- 3 Package
>M
1
i
i
C
I!
-JU-D.tPL
"A """VZI r i3H
/"^^\— / 4\. ct
iB
i t Vv^^x"
1
'-SB
nun
DIM MINJ MAX
ft
39JOO
B 25.30 266?
C
7.80 8,50
D
0.90 1.10
E
t.40 1.60
S_
10.92
H
546
K 11.10 13.50
L
1675 17.05
N 1940 19.62
Q
4.00 420
H
-jQ^ff 3020
V
4 30 450
NJ Semi-Condiictors reserves the right to change test conditions, parameter limits and packagedimensions without
notice. Intbrmation Furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. I lowever, NJ Somi-Condtictors assumes no responsibility tor any errors or omissions discovered in itsuse.
N.I Semi-Conductors encourages customers to verily that datasheets are current before placing orders.
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