2SC2502 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SC2502 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min)
·Fast Switching Speed
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.7V(Max.)@ IC= 3A
APPLICATIONS
·Designed for use in high-voltage, high-speed , power
switching in inductive circuit , they are particularly suited
for 115 and 220V switchmode applications such as swit-
ching regulator’s, inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
500
VCEO
Collector-Emitter Voltage
400
VEBO
Emitter-Base Voltage
7
IC
Collector Current-Continuous
6
ICM
Collector Current-Peak
12
IB
Base Current-Continuous
2
PC
Collector Power Dissipation
@ TC=25℃
50
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.5 ℃/W
SPTECH website：www.superic-tech.com
2SC2502
1
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