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BC548 データシートの表示(PDF) - New Jersey Semiconductor

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BC548
NJSEMI
New Jersey Semiconductor NJSEMI
BC548 Datasheet PDF : 2 Pages
1 2
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA - 25tC unless otherwise noted
Test Conditions
Win Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage lc = 10mA, IB = 0
30
V
V(BR)CBQ
Collector-Base Breakdown Voltage
lc = 10(iA, IE = 0
30
V
V(BR)CES
Collector-Base Breakdown Voltage
lc = 10uA, IE = 0
30
V
V(BR)EBO
Emitter-Base Breakdown Voltage
lE = 10|iA, I0 = 0
5.0
V
ICBO
Collector Cutoff Current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = +150 °C
15
nA
5.0
UA
ON CHARACTERISTICS
HFE
DC Current Gain
VCE = 5.0 V, lc = 2.0 mA 548
110
800
548A
110
220
548B 200
450
548C
420
800
VcE(sat)
Collector-Emitter Saturation Voltage
lc = 10mA, IB = 0.5mA
lc = 100mA, IB = 5.0mA
0.25
V
0.60
V
Veeion)
Base-Emitter On Voltage
VCE = 5.0 V, lc = 2.0mA
VCE = 5.0V, lc = 10mA
0.58
0.70
V
0.77
V
SMALL SIGNAL CHARACTERISTICS
hie
Small-Signal Current Gain
NF
Noise Figure
lc = 2.0 mA, VCE = 5.0V,
f = 1 .0 kHz
VCE = 5.0V, lc = 200nA,
Rs = 2.0k£i, f = 1.0 kHz,
Bm = 200 Hz
125
900
10
dB

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