B1344 データシートの表示（PDF） - New Jersey Semiconductor
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B1344 Datasheet PDF : 2 Pages
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JEIIEU ^£.mi-Concmdtoi iJ^ioaucti, Una.
tX
k/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
- Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1344
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-100V(Min)
• High DC Current Gain-
: hFE= 1000(Min)@ (VGt= -3V, lc= -2A)
• Complement to Type 2SD2025
APPLICATIONS
• Designed for power amplifier applications.
* JL
FIV: 1 Base
2 Collector
3 Emitter
TO-220F* package
ABSOLUTE MAXIMUM RATINGS(Ta=25-C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
-100
V
-100
V
VEBO
Emitter-Base Voltage
Ic
Collector Current-Continuous
ICM
Collector Current-Peak
r
Collector Power Dissipation
@Ta=25 C
re
Collector Power Dissipation
@TC=25 C
T.,
Junction Temperature
Tsla
Storage Temperature
-7
V
-8
A
-10
A
2
30
150
C
-55-150
"C
r mm
iHM WIN MAX
A 16.85 1i7.t5
b
t: ,f:4 10.10
.;•
4.35
4.65
D ft.75 £ £ C
F
1.20
3,40
0 6.90 ? 1C
h
5,15 ' 5.45
0.45
0,75
K 13.35 13.65
L
1.10
1,30
N 4.SS
5.13
Q 4.S5
5,15
R
i SJ 3.25
S
2.70 2.90
t
1.75
2.05
u 140 1.50
N.I Seini-C'ouductors reserves the right to change tost conditions, parameter limits ;ind piicknge dimensions without
iioiiee. Infomintion furnished by NJ Scini-Comluctors is helieved to he hotli iiecuniio mul reliahle ai the lime of lioin
u> press. However, N.I Senii-C'ondiietors HNSUIIIOS no responsihilily lorui]) errors or omissions discovtreil in its n^e.
\'.l Senii-('ondiii.-iors eneouni-ies customers lo \eril\l Jalasheels are umciii hel'ore pl.iti
Qualiry Semi-Conductors
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