IRF321 データシートの表示（PDF） - Inchange Semiconductor
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IRF321 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF321
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS(TH) Gate Threshold Voltage
VGS=0; ID=250µA
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=1.5A
IGSS
Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS
Zero Gate Voltage Drain Current
VDS=350V; VGS=0
VSD
Diode Forward Voltage
IS=3.0A; VGS=0
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
VGS=10V;
ID=1.5A;
VDD=200V;
RL=50Ω
MIN TYPE MAX UNIT
350
V
2.0
4.0
V
1.8
Ω
±100 nA
250
uA
1.6
V
500
40
pF
100
50
40
ns
50
100
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