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CM75DY-34A データシートの表示(PDF) - Powerex

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CM75DY-34A Datasheet PDF : 4 Pages
1 2 3 4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75DY-34A
Dual IGBTMOD™ A-Series Module
75 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (DC, TC = 111°C)*4
Peak Collector Current (Pulse, Repetitive)*2
Maximum Collector Dissipation (TC = 25°C, Tj 150°C)*2,*4
Emitter Current (TC = 25°C)*2
Peak Emitter Current (Pulse, Repetitive)*2
Mounting Torque, M5 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.)
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
PC
IE*1
IEM*1
VISO
CM75DY-34A
–40 to 150
–40 to 125
1700
±20
75
150
780
75
150
30
40
310
3500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage
Symbol
ICES
IGES
VGE(th)
VCE(sat)
QG
VEC*1
Test Conditions
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 7.5mA, VCE = 10V
IC = 75A, VGE = 15V, Tj = 25°C*3
IC = 75A, VGE = 15V, Tj = 125°C*3
VCC = 1000V, IC = 75A, VGE = 15V
IE = 75A, VGE = 0V*3
Min.
Typ.
Max. Units
1.0
mA
2.0
µA
5.5
7.0
8.5
Volts
2.2
2.8
Volts
2.45
Volts
500
nC
3.0
Volts
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Input Capacitance
Cies
Output Capacitance
Coes
VCE = 10V, VGE = 0V
Reverse Transfer Capacitance
Cres
Inductive
Turn-on Delay Time
td(on)
Load
Rise Time
tr
VCC = 1000V, IC = 75A,
Switch
Turn-off Delay Time
td(off)
VGE1 = VGE2 = 15V, RG = 6.4Ω,
Time
Fall Time
tf
Inductive Load
Diode Reverse Recovery Time
trr*1
Switching Operation,
Diode Reverse Recovery Charge
Qrr*1
IE = 75A
*1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.
18.5 nf
2.1 nf
0.4 nf
200
ns
150
ns
550
ns
350
ns
300
ns
7.5
µC
2
01/10 Rev. 1

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